BD809_14 Datasheet, PDF (1/4 Pages) ON Semiconductor – Plastic High Power Silicon Transistors

BD809 (NPN),
BD810 (PNP)
Plastic High Power
Silicon Transistors
These devices are designed for use in high power audio amplifiers
utilizing complementary or quasi complementary circuits.
Features
• High DC Current Gain
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ T_C = 25°C
Derate above 25°C
V_CEO
V_CBO
V_EBO
I_C
I_B
P_D
80
80
5.0
10
6.0
90
0.72
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
Operating and Storage Junction
Temperature Range
T_J, T_stg −55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
R_qJC
Max
1.39
Unit
°C/W
www.onsemi.com
10 AMPERE
POWER TRANSISTORS
80 VOLTS
90 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
1
BASE
EMITTER 3
4
1
BASE
EMITTER 3
TO−220
CASE 221A
STYLE 1
12 ₃
MARKING DIAGRAM
BD8xxG
AY WW
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
1
November, 2014 − Rev. 8
BD8xx =
A
=
Y
=
WW =
G
=
Device Code
x = 09 or 10
Assembly Location
Year
Work Week
Pb−Free Package
ORDERING INFORMATION
Device
BD809G
BD810G
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
Shipping
50 Units/Rail
50 Units/Rail
Publication Order Number:
BD809/D