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BD808 Datasheet, PDF (1/4 Pages) Motorola, Inc – Plastic High Power Silicon PNP Transistor | |||
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Plastic High Power Silicon
PNP Transistor
BD808
BD810*
. . . designed for use in high power audio amplifiers utilizing
*ON Semiconductor Preferred Device
complementary or quasi complementary circuits.
10 AMPERE
⢠DC Current Gain â
POWER TRANSISTORS
PNP SILICON
hFE = 30 (Min) @ IC
60, 80 VOLTS
= 2.0 Adc
90 WATTS
⢠BD 808, 810 are complementary with BD 807, 890
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ MAXIMUM RATINGS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Rating
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ EmitterâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Base Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Total Device Dissipation TC = 25_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Derate above 25_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Operating and Storage Junction
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
TJ, Tstg
Type
BD808
BD810
BD808
BD810
Value
60
80
70
80
5.0
10
6.0
90
720
â55 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
mW/_C
_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ THERMAL CHARACTERISTICS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Characteristic
Symbol
Max
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Thermal Resistance, Junction to Case
θJC
1.39
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Characteristic
Symbol
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Sustaining Voltage*
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 0.1 Adc, IB = 0)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Cutoff Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (VCB = 70 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
BVCEO
ICBO
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Emitter Cutoff Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (VBE = 5.0 Vdc, IC = 0)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ DC Current Gain
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 2.0 A, VCE = 2.0 V)
(IC = 4.0 A, VCE = 2.0 V)
IEBO
hFE
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Saturation Voltage*
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 3.0 Adc, IB = 0.3 Adc)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ BaseâEmitter On Voltage*
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 4.0 Adc, VCE = 2.0 Vdc)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CurrentâGain Bandwidth Product
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃà *Pulse Test: Pulse Width x 300 µs, Duty Cycle x 2.0%.
VCE(sat)
VBE(on)
fT
Unit
_C/W
Type
BD808
BD810
BD808
BD810
CASE 221Aâ06
TOâ220AB
Min
Max
Unit
60
â
Vdc
80
â
mAdc
â
1.0
â
1.0
â
2.0
mAdc
30
â
15
â
â
1.1
Vdc
â
1.6
Vdc
1.5
â
MHz
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
January, 2001 â Rev. 8
Publication Order Number:
BD808/D
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