BD791 Datasheet, PDF (1/6 Pages) ON Semiconductor – POWER TRANSISTOR SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by BD791/D
NPN Plastic Silicon Power
Transistor
. . . designed for low power audio amplifier and low–current, high speed switching
applications.
• High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 100 Vdc (Min)
• High DC Current Gain @ IC = 200 mAdc
hFE = 40–250
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc
• High Current Gain — Bandwidth Product —
fT = 40 MHz (Min) @ IC = 100 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{*MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current — Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{— Peak}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TC = 25_C}
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Temperature Range}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Case}
Symbol
VCEO
VCB
VEBO
IC
IB
PD
TJ,Tstg
Symbol
R_θJC
Max
100
100
6.0
4.0
8.0
1.0
15
0.12
– 65 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Max
Unit
8.34
_C/W
16
1.6
12
1.2
8.0
0.8
4.0
0.4
0
0
20
40
60
80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
BD791
Motorola Preferred Device
4 AMPERE
POWER TRANSISTOR
SILICON
100 VOLTS
15 WATTS
CASE 77–09
TO–225AA TYPE
©_MM_oo_toto_rr_oo_lla_a, I_Bnc_ip. 1_o9_la98_{r Power Transistor Device Data}
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