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BD787G Datasheet, PDF (1/6 Pages) ON Semiconductor – Complementary Plastic Silicon Power Transistors
BD787G (NPN),
BD788G (PNP)
Complementary Plastic
Silicon Power Transistors
These devices are designed for lower power audio amplifier and
low current, high−speed switching applications.
Features
• Low Collector−Emitter Sustaining Voltage
• High Current−Gain − Bandwidth Product
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current − Continuous
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
VCEO
VCBO
VEBO
IC
ICM
IB
PD
60
Vdc
80
Vdc
6.0
Vdc
4.0
Adc
8.0
Adc
1.0
Adc
15
W
0.12
mW/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg –65 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
RqJC
Max
8.34
Unit
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 13
http://onsemi.com
4 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
60 VOLTS, 15 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
3
BASE
EMITTER 1
3
BASE
EMITTER 1
123
TO−225
CASE 77−09
STYLE 1
MARKING DIAGRAM
YWW
BD78xG
Y
= Year
WW = Work Week
BD78x = Device Code
x = 7 or 8
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BD787G
TO−225
(Pb−Free)
500 Units/Box
BD788G
TO−225
(Pb−Free)
500 Units/Box
Publication Order Number:
BD787/D