BD777 Datasheet, PDF (1/4 Pages) Motorola, Inc – Plastic Darlington Complementary Silicon Power Transistors

BD777
Plastic Darlington
Complementary Silicon
Power Transistors
Plastic Darlington complementary silicon power
transistors designed for general purpose amplifier and high−speed
switching applications.
http://onsemi.com
• High DC Current Gain
h_FE = 1400 (Typ) @ I_C
= 2.0 Adc
• Collector−Emitter Sustaining Voltage — @ 10 mAdc
DARLINGTON
4−AMPERE
COMPLEMENTARY SILICON
V_CEO(sus) = 45 Vdc (Min) — BD776
POWER TRANSISTORS
= 60 Vdc (Min) — BD777, 778
45, 60, 80 VOLTS
= 80 Vdc (Min) — BD780
• Reverse Voltage Protection Diode
15 WATTS
• Monolithic Construction with Built−in Base−Emitter output Resistor
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage
Collector−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current —}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Continuous Peak}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Device Dissipation}
T_C = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Junction Temperature}
Range
Symbol
V_CEO
V_CB
V_EB
I_C
BD776
45
45
I_B
P_D
BD777
BD778
60
60
5.0
4.0
6.0
100
15
0.12
BD780
80
80
Unit
Vdc
Vdc
Vdc
Adc
mAdc
W
W/_C
T_J, T_stg
– 65 to + 150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristics}
Symbol
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Case}
R_θJC
8.34
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Ambient}
R_θJA
83.3
Unit
_C/W
_C/W
CASE 77−08
TO−225AA TYPE
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 9
Publication Order Number:
BD777/D