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BD675_08 Datasheet, PDF (1/4 Pages) ON Semiconductor – Plastic MediumㅡPower Silicon NPN Darlingtons | |||
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BD675, BD675A, BD677,
BD677A, BD679, BD679A,
BD681
BD681 is a Preferred Device
Plastic Medium-Power
Silicon NPN Darlingtons
This series of plastic, mediumâpower silicon NPN Darlington
transistors can be used as output devices in complementary
generalâpurpose amplifier applications.
Features
⢠High DC Current Gain:
hFE = 750 (Min) @ IC
= 1.5 and 2.0 Adc
⢠Monolithic Construction
⢠BD675, 675A, 677, 677A, 679, 679A, 681 are complementary
with BD676, 676A, 678, 678A, 680, 680A, 682
⢠BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803
⢠PbâFree Packages are Available*
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ MAXIMUM RATINGS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Rating
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Voltage
BD675, A
BD677, A
BD679, A
BD681
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâBase Voltage
BD675, A
BD677, A
BD679, A
BD681
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ EmitterâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Base Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃà Total Device Dissipation @ TC = 25°C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃà Derate above 25°C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Operating and Storage Junction
Temperature Range
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ THERMAL CHARACTERISTICS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Characteristic
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Thermal Resistance,
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ JunctionâtoâCase
Symbol
Value
VCEO
45
60
80
100
VCBO
45
60
80
100
VEBO
IC
IB
PD
5.0
4.0
1.0
40
0.32
TJ, Tstg â 55 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
°C
Symbol
qJC
Max
3.13
Unit
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our PbâFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
1
September, 2008 â Rev. 13
http://onsemi.com
4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
60, 80, 100 VOLTS, 40 WATTS
COLLECTOR 2
BASE
3
EMITTER 1
321
TOâ225AA
CASE 77
STYLE 1
MARKING DIAGRAMS
YWW
BD6xxG
YWW
B
BD6xxAG
BD6xx
Y
WW
G
= Device Code
x = 75, 77, 79, 81
= Year
= Work Week
= PbâFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
BD675/D
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