BD249C Datasheet, PDF (1/6 Pages) ON Semiconductor – NPN High−Power Transistor

BD249C
NPN High−Power Transistor
NPN high−power transistors are for general−purpose power
amplifier and switching applications.
Features
• ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
• Epoxy Meets UL 94 V−0 @ 0.125
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current −
Continuous
Peak (Note 1)
V_CEO
100
Vdc
V_CBO
100
Vdc
V_EBO
5.0
Vdc
I_C
25
Adc
40
Apk
Base Current − Continuous
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
I_B
5.0
P_D
125
1.0
T_J, T_stg – 65 to +150
Adc
W
W/°C
°C
Unclamped Inductive Load
E_SB
90
mJ
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Thermal Resistance,
Junction−to−Ambient
Symbol
R_qJC
R_qJA
Max
1.0
35.7
Unit
°C/W
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 2
http://onsemi.com
25 AMP, 100 VOLT, 125 WATT
NPN SILICON
POWER TRANSISTOR
1
2
3
TO−218
CASE 340D
STYLE 1
MARKING DIAGRAM
AYWWG
BD249C
BD249C = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
BD249C
BD249CG
Package
TO−218
TO−218
(Pb−Free)
Shipping
30 Units/Rail
30 Units/Rail
Publication Order Number:
BD249C/D