BD241C_11 Datasheet, PDF (1/6 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistors 80−100 VOLTS

BD241C (NPN),
BD242B (PNP),
BD242C (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
• Collector−Emitter Saturation Voltage −
V_CE = 1.2 Vdc (Max) @ I_C = 3.0 Adc
• Collector−Emitter Sustaining Voltage −
V_CEO(sus) = 100 Vdc (Min) BD241C, BD242C
• High Current Gain − Bandwidth Product
f_T = 3.0 MHz (Min) @ I_C = 500 mAdc
• Compact TO−220 AB Package
• Epoxy Meets UL94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
• Pb−Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
Collector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^Peak
BD241C
Symbol BD242B BD242C Unit
V_CEO
80
100
Vdc
V_CES
90
115
Vdc
V_EB
5.0
Vdc
I_C
Adc
3.0
5.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
I_B
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation @
P_D
T_C = 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25°C}
1.0
Adc
40
W
0.32
W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage}
T_J, T_stg
– 65 to + 150
°C
Junction Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction−to−Ambient}
R_qJA
62.5 °C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Thermal Resistance, Junction−to−Case}
R_qJC
3.125 °C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Stresses exceeding Maximum Ratings may damage the device. Maximum}
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
POWER TRANSISTORS
COMPLEMENTARY
SILICON
3 AMP
80−100 VOLTS
40 WATTS
MARKING
DIAGRAM
1
2
3
TO−220AB
CASE 221A−09
STYLE 1
AYWW
BD24xxG
BD24xx = Device Code
xx = 1C, 2B, or 2C
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BD241C
TO−220AB
50 Units/Rail
BD241CG
TO−220AB
(Pb−Free)
50 Units/Rail
BD242B
TO−220AB
50 Units/Rail
BD242BG
TO−220AB
(Pb−Free)
50 Units/Rail
BD242C
TO−220AB
50 Units/Rail
BD242CG
TO−220AB
(Pb−Free)
50 Units/Rail
© Semiconductor Components Industries, LLC, 2011
1
October, 2011 − Rev. 8
Publication Order Number:
BD241C/D