BD241C_07 Datasheet, PDF (1/6 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistors

BD241C (NPN),
BD242B (PNP),
BD242C (PNP)
BD241C and BD242C are Preferred Devices
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
•ăCollector-Emitter Saturation Voltage -
V_CE = 1.2 Vdc (Max) @ I_C = 3.0 Adc
•ăCollector-Emitter Sustaining Voltage -
V_CEO(sus) = 100 Vdc (Min) BD241C, BD242C
•ăHigh Current Gain - Bandwidth Product
f_T = 3.0 MHz (Min) @ I_C = 500 mAdc
•ăCompact TO-220 AB Package
•ăEpoxy Meets UL94 V-0 @ 0.125 in
•ăESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
•ăPb-Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
Collector-Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector-Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter-Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^Peak
Symbol
V_CEO
V_CES
V_EB
I_C
BD241C
BD242B BD242C
80
100
90
115
5.0
3.0
5.0
Unit
Vdc
Vdc
Vdc
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
I_B
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation @
P_D
T_C = 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25°C}
1.0
Adc
40
W
0.32
W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage}
T_J, T_stg
–ā65 to +ā150
°C
Junction Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction-to-Ambient RqJA}
62.5 °C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Thermal Resistance, Junction-to-Case}
R_qJC
3.125 °C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Stresses exceeding Maximum Ratings may damage the device. Maximum}
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
POWER TRANSISTORS
COMPLEMENTARY
SILICON
3 AMP
80-100 VOLTS
40 WATTS
MARKING
DIAGRAM
1
2
3
TO-220AB
CASE 221A-09
STYLE 1
AYWW
BD24xxG
BD24xx = Device Code
xx = 1C, 2B, or 2C
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb-Free Package
ORDERING INFORMATION
Device
Package
Shipping
BD241C
TO-220AB
50 Units/Rail
BD241CG
TO-220AB
(Pb-Free)
50 Units/Rail
BD242B
TO-220AB
50 Units/Rail
BD242BG
TO-220AB
(Pb-Free)
50 Units/Rail
BD242C
TO-220AB
50 Units/Rail
BD242CG
TO-220AB
(Pb-Free)
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
©Ă Semiconductor Components Industries, LLC, 2007
1
November, 2007 - Rev. 7
Publication Order Number:
BD241C/D