BD241C Datasheet, PDF (1/6 Pages) ON Semiconductor – POWER TRANSISTORS COMPLEMENTARY SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD241C/D
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general purpose amplifier and switching applications.
• Collector–Emitter Saturation Voltage —
VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc
• Collector–Emitter Sustaining Voltage —
VCEO(sus) = 80 Vdc (Min.) BD242B
VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C
• High Current Gain — Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
• Compact TO–220 AB Package
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current — Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Device Dissipation @ TC = 25_C}
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Temperature Range}
Symbol
VCEO
VCES
VEB
IC
IB
PD
TJ, Tstg
BD241C
BD242B BD242C
80
100
90
115
5.0
3.0
5.0
1.0
40
0.32
– 65 to + 150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Ambient}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Case}
Symbol
R_θJA
R_θJC
Max
62.5
3.125
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
_C/W
40
BD^N2^P4^N1C*
PNP
BD242B
BD242C*
*Motorola Preferred Device
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80, 100 VOLTS
40 WATTS
CASE 221A–09
TO–220AB
30
20
10
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
©_MM_oo_toto_rr_oo_lla_a, I_Bnc_ip. 1_o9_la98_{r Power Transistor Device Data}
1