BD237G Datasheet, PDF (1/5 Pages) ON Semiconductor – Plastic Medium Power Bipolar Transistors

BD237G (NPN),
BD234G, BD238G (PNP)
Plastic Medium Power
Bipolar Transistors
Designed for use in 5.0 to 10 W audio amplifiers and drivers
utilizing complementary or quasi complementary circuits.
Features
• High DC Current Gain
• Epoxy Meets UL 94 V0 @ 0.125 in
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
BD234G
DB237G, BD238G
V_CEO
Vdc
45
80
Collector−Base Voltage
BD234G
DB237G, BD238G
V_CBO
Vdc
60
100
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ T_C = 25_C
Operating and Storage Junction
Temperature Range
V_EBO
5.0
Vdc
I_C
2.0
Adc
I_B
1.0
Adc
P_D
W
25
T_J, T_stg – 55 to + 150
_C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM
C
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Thermal Resistance, Junction−to−Case R_qJC
5.0
Unit
_C/W
http://onsemi.com
2.0 AMPERES
POWER TRANSISTORS
25 WATTS
PNP
COLLECTOR
2, 4
NPN
COLLECTOR
2, 4
3
BASE
3
BASE
1
EMITTER
1
EMITTER
123
TO−225
CASE 77−09
STYLE 1
MARKING DIAGRAM
YWW
BD23xG
Y
= Year
WW = Work Week
BD23x = Device Code
x = 4, 7 or 8
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data
sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 17
Publication Order Number:
BD237/D