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BD180 Datasheet, PDF (1/4 Pages) Motorola, Inc – Plastic Medium Power Silicon PNP Transistor | |||
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BD180
Plastic Medium Power
Silicon PNP Transistor
This device is designed for use in 5.0 to 10 Watt audio amplifiers
and drivers utilizing complementary or quasi complementary circuits.
Features
⢠DC Current Gain â hFE = 40 (Min) @ IC = 0.15 Adc
⢠BD180 is complementary with BD179
⢠PbâFree Package is Available*
MAXIMUM RATINGS
Rating
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ EmitterâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Base Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Total Power Dissipation @ TC = 25_C
Derate above 25_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Operating and Storage Junction
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Temperature Range
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ THERMAL CHARACTERISTICS
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
TJ, Tstg
Value
Unit
80
Vdc
80
Vdc
5.0
Vdc
1.0
Adc
2.0
Adc
30
W
240
mW/_C
â65 to +150 _C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctionâtoâCase
qJC
4.16
_C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
3.0 AMPERES
POWER TRANSISTORS
PNP SILICON
80 VOLTS, 30 WATTS
321
TOâ225
CASE 77
STYLE 1
MARKING DIAGRAM
YWW
BD180G
Y
= Year
WW = Work Week
BD180 = Device Code
G
= PbâFree Package
ORDERING INFORMATION
Device
Package
Shipping
BD180
BD180G
TOâ225
TOâ225
(PbâFree)
500 Units/Box
500 Units/Box
*For additional information on our PbâFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 â Rev. 11
Publication Order Number:
BD180/D
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