BD179G Datasheet, PDF (1/4 Pages) ON Semiconductor – Plastic Medium-Power Silicon NPN Transistor

BD179G
Plastic Medium-Power
Silicon NPN Transistor
This device is designed for use in 5.0 to 10 Watt audio amplifiers
and drivers utilizing complementary or quasi complementary circuits.
Features
• High DC Current Gain
• BD179 is complementary with BD180
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Power Dissipation
@ T_C = 25_C
Derate above 25_C
V_CEO
V_CBO
V_EBO
I_C
I_B
P_D
80
Vdc
80
Vdc
5.0
Vdc
3.0
Adc
1.0
Adc
30
W
240
mW/_C
Operating and Storage Junction
Temperature Range
T_J, T_stg –65 to +150
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Thermal Resistance, Junction−to−Case R_qJC
4.16
Unit
_C/W
http://onsemi.com
3.0 AMPERES
POWER TRANSISTORS
NPN SILICON
80 VOLTS, 30 WATTS
COLLECTOR
2
3
BASE
1
EMITTER
321
TO−225
CASE 77
STYLE 1
MARKING DIAGRAM
YWW
BD179G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
1
Noember, 2013 − Rev. 15
Y
= Year
WW = Work Week
BD179 = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
Device
BD179G
Package
TO−225
(Pb−Free)
Shipping
500 Units/Box
Publication Order Number:
BD179/D