BD179 Datasheet, PDF (1/4 Pages) Motorola, Inc – Plastic Medium Power Silicon NPNP Transistor

BD179
Plastic Medium-Power
NPN Silicon Transistor
This device is designed for use in 5.0 to 10 Watt audio amplifiers
and drivers utilizing complementary or quasi complementary circuits.
Features
•ăDC Current Gain - h_FE = 40 (Min) @ I_C = 0.15 Adc
•ăBD179 is complementary with BD180
•ăPb-Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation @ T_C = 25_C
Derate above 25_C
V_CEO
V_CBO
V_EBO
I_C
I_B
P_D
80
Vdc
80
Vdc
5.0
Vdc
3.0
Adc
1.0
Adc
30
W
240
mW/_C
Operating and Storage Junction
Temperature Range
T_J, T_stg –ā65 to +ā150 _C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
q_JC
4.16
_C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
3.0 AMPERES
POWER TRANSISTORS
NPN SILICON
80 VOLTS, 30 WATTS
321
TO-225
CASE 77
STYLE 1
MARKING DIAGRAM
YWW
BD179G
Y
= Year
WW = Work Week
BD179 = Device Code
G
= Pb-Free Package
ORDERING INFORMATION
Device
Package
Shipping
BD179
BD179G
TO-225
TO-225
(Pb-Free)
500 Units/Box
500 Units/Box
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©Ă Semiconductor Components Industries, LLC, 2007
1
July, 2007 - Rev. 12
Publication Order Number:
BD179/D