BD159G Datasheet, PDF (1/3 Pages) ON Semiconductor – Plastic Medium-PowerSilicon NPN Transistor

BD159G
Plastic Medium-Power
Silicon NPN Transistor
This device is designed for power output stages for television, radio,
phonograph and other consumer product applications.
Features
• Suitable for Transformerless, Line−Operated Equipment
• Thermopadt Construction Provides High Power Dissipation Rating
for High Reliability
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ T_C = 25_C
Derate above 25_C
V_CEO
V_CB
V_EB
I_C
I_CM
I_B
P_D
350
Vdc
375
Vdc
5.0
Vdc
0.5
Adc
1.0
Adc
0.25
Adc
20
W
0.16
mW/_C
Operating and Storage Junction
Temperature Range
T_J, T_stg –65 to +150
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction−to−Case RqJC}
6.25
Unit
_C/W
http://onsemi.com
0.5 AMPERE
POWER TRANSISTOR
NPN SILICON
350 VOLTS, 20 WATTS
COLLECTOR
2
3
BASE
1
EMITTER
TO−225
CASE 77
STYLE 1
123
MARKING DIAGRAM
YWW
BD159G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
1
October, 2013 − Rev. 6
Y
= Year
WW = Work Week
BD159 = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
Device
BD159G
Package
TO−225
(Pb−Free)
Shipping
500 Units/Box
Publication Order Number:
BD159/D