BCX71JLT1G Datasheet, PDF (1/6 Pages) ON Semiconductor – General Purpose Transistor PNP Silicon

BCX71JLT1G
General Purpose Transistor
PNP Silicon
Features
• Moisture Sensitivity Level: 1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
−45
−45
−5.0
−100
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol Max
Unit
Total Device Dissipation (Note 1)
T_A = 25°C
Derate above 25°C
P_D
350
mW
2.8
mW/°C
Storage Temperature
Thermal Resistance,
Junction-to-Ambient (Note 1)
T_stg
R_qJA
150
°C
357
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Package mounted on 99.5% alumina 10 X 8 X 0.6 mm.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
BJ M G
G
BJ
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
BCX71JLT1G
SOT−23 3000/Tape & Reel
(Pb−free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 − Rev. 3
Publication Order Number:
BCX71J/D