BCX70GLT1 Datasheet, PDF (1/9 Pages) Motorola, Inc – General Purpose Transistors

BCX70GLT1
General Purpose
Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
45
Vdc
45
Vdc
5.0
Vdc
200
mAdc
Characteristic
Total Device Dissipation FR− 5 Board⁽¹⁾
T_A = 25°C
Derate above 25°C
Symbol
P_D
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, Junction to
Ambient
R_qJA
556
°C/W
Total Device Dissipation
Alumina Substrate,⁽²⁾ T_A = 25°C
Derate above 25°C
P_D
300
mW
2.4
mW/°C
Thermal Resistance, Junction to
Ambient
R_qJA
417
°C/W
Junction and Storage Temperature
T_J, T_stg − 55 to +150 °C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I_C = 2.0 mAdc, I_E= 0)
Emitter −Base Breakdown Voltage
(I_E = 1.0 mAdc, I_C = 0)
Collector Cutoff Current
(V_CE = 32 Vdc)
(V_CE = 32 Vdc, T_A = 150°C)
Emitter Cutoff Current
(V_EB = 4.0 Vdc, I_C = 0)
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
http://onsemi.com
3
1
2
CASE 318 −08, STYLE 6
SOT−23 (TO −236)
COLLECTOR
3
1
BASE
2
EMITTER
Symbol
Min
Max
Unit
V_(BR)CEO
45
V_(BR)EBO
5.0
I_CES
—
—
I_EBO
—
—
Vdc
—
Vdc
20
nAdc
20
mAdc
20
nAdc
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 2
Publication Order Number:
BCX70GLT1/D