BCX56-10R1 Datasheet, PDF (1/4 Pages) ON Semiconductor – NPN Silicon Epitaxial Transistor

BCX56-10R1
Preferred Device
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT-89
package, which is designed for medium power surface mount
applications.
• High Current: 1.0 Amp
• Available in 7 inch/1000 unit Tape and Reel
• Device Marking: BK
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
VCEO
80
VCBO
100
VEBO
5
IC
1
PD
(Note 1.)
1.56
13
(Note 2.)
0.67
5.0
Operating and Storage
Temperature Range
TJ, Tstg –65 to 150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance
Junction-to-Ambient
(surface mounted)
R_θJA
(Note 1.)
80
(Note 2.)
190
Maximum Temperature for
Soldering Purposes
Time in Solder Bath
TL
260
10
1. FR–4 @ 1.0 X 1.0 inch Pad
2. FR–4 @ Minimum Pad
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°C
Sec
http://onsemi.com
MEDIUM POWER
NPN SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
COLLECTOR 2
BASE
1
EMITTER
3
1
2
3
SOT–89
CASE 1213
STYLE 2
MARKING DIAGRAM
YM
BK
Y = Year Code
M = Month Code
BK = Device Code
ORDERING INFORMATION
Device
Package
Shipping
BCX56–10R1 SOT–89 1000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
June, 2001 – Rev. 0
Publication Order Number:
BCX56–10R1/D