BCX18LT1G Datasheet, PDF (1/4 Pages) ON Semiconductor – General Purpose Transistors

BCX18LT1G, PNP
BCX19LT1G, NPN
General Purpose
Transistors
Voltage and Current are Negative for
PNP Transistors
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
BCX19LT1
BCX18LT1
V_CEO
Vdc
45
25
Collector − Base Voltage
BCX19LT1
BCX18LT1
V_CBO
Vdc
50
30
Emitter − Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_EBO
I_C
5.0
Vdc
500
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
P_D
(Note 1), T_A = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T_A = 25°C
Derate above 25°C
R_qJA
P_D
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
417
°C/W
Junction and Storage Temperature
T_J, T_stg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in 99.5% alumina.
http://onsemi.com
PNP
COLLECTOR
3
NPN
COLLECTOR
3
1
BASE
1
BASE
2
EMITTER
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
xx M G
G
1
xx
= T2 or U1
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 − Rev. 0
Publication Order Number:
BCX18LT1/D