BCW69LT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – General Purpose Transistors

BCW69LT1
General Purpose
Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board ⁽¹⁾
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to
Ambient
Total Device Dissipation
Alumina Substrate, ⁽²⁾ T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to
Ambient
Junction and Storage Temperature
Symbol
V_CEO
V_EBO
I_C
Value
−45
−5.0
−100
Unit
Vdc
Vdc
mAdc
Symbol
P_D
R_θJA
Max
225
1.8
556
Unit
mW
mW/°C
°C/W
P_D
R_θJA
300
mW
2.4
mW/°C
417
°C/W
T_J, T_stg − 55 to +150
°C
http://onsemi.com
3
1
2
CASE 318 −08, STYLE 6
SOT−23 (TO −236AB)
COLLECTOR
3
1
BASE
2
EMITTER
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I_C = −2.0 mAdc, I_B = 0)
Collector−Emitter Breakdown Voltage (I_C = −100 μAdc, V_EB = 0)
Emitter−Base Breakdown Voltage (I_E = −10 μAdc, I_C = 0)
Collector Cutoff Current
(V_CB = −20 Vdc, I_E = 0)
(V_CB = −20 Vdc, I_E = 0, T_A = 100°C)
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Symbol
V_(BR)CEO
V_(BR)CES
V_(BR)EBO
I_CBO
Min
−45
−50
−5.0
—
—
Max
—
—
—
−100
−10
Unit
Vdc
Vdc
Vdc
nAdc
μAdc
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 2
Publication Order Number:
BCW69LT1/D