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BCW68GLT1G Datasheet, PDF (1/3 Pages) ON Semiconductor – General Purpose Transistor PNP Silicon | |||
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BCW68GLT1G
General Purpose Transistor
PNP Silicon
Features
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorâEmitter Voltage
VCEO
â45
Vdc
CollectorâBase Voltage
VCBO
â60
Vdc
EmitterâBase Voltage
VEBO
â5.0
Vdc
Collector Current â Continuous
IC
â800
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may affect device
reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FRâ5 Board
PD
(Note 1) TA = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance,
JunctionâtoâAmbient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD
300
mW
2.4
mW/°C
Thermal Resistance,
JunctionâtoâAmbient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg â55 to +150
°C
1. FRâ5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
1
BASE
2
EMITTER
3
1
2
SOTâ23
CASE 318
STYLE 6
MARKING DIAGRAM
DG MG
G
DG = Specific Device Code
M
= Date Code*
G
= PbâFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shippingâ
BCW68GLT1G SOTâ23 3000 / Tape & Reel
(PbâFree)
BCW68GLT3G SOTâ23 10000 / Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 â Rev. 5
Publication Order Number:
BCW68GLT1/D
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