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BCW65ALT1G_09 Datasheet, PDF (1/3 Pages) ON Semiconductor – General Purpose Transistor | |||
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BCW65ALT1G,
BCW65CLT1G
General Purpose Transistor
NPN Silicon
Features
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector â Emitter Voltage
Collector â Base Voltage
Emitter â Base Voltage
Collector Current â Continuous
VCEO
VCBO
VEBO
IC
32
Vdc
60
Vdc
5.0
Vdc
800
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FRâ 5 Board
PD
(Note 1), TA = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance,
JunctionâtoâAmbient
RqJA
556
°C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD
300
mW
2.4
mW/°C
Thermal Resistance,
JunctionâtoâAmbient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg â55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FRâ5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOTâ23
CASE 318
STYLE 6
MARKING DIAGRAMS
Ex M G
G
Ex = Device Code
x = A or C
M = Date Code*
G = PbâFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shippingâ
BCW65ALT1G SOTâ23 3000/Tape & Reel
(PbâFree)
BCW65CLT1G SOTâ23 3000/Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 â Rev. 5
Publication Order Number:
BCW65ALT1/D
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