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BCW65ALT1G Datasheet, PDF (1/3 Pages) ON Semiconductor – General Purpose Transistor | |||
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BCW65ALT1G,
BCW65CLT1G
General Purpose Transistor
NPN Silicon
Features
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector â Emitter Voltage
Collector â Base Voltage
Emitter â Base Voltage
Collector Current â Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
32
Vdc
60
Vdc
5.0
Vdc
800
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FRâ 5 Board
PD
(Note 1), TA = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance,
JunctionâtoâAmbient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance,
JunctionâtoâAmbient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg â 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FRâ 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOTâ23
CASE 318
STYLE 6
MARKING DIAGRAMS
Ex M G
G
Ex = Device Code
x = A or C
M = Date Code*
G = PbâFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shippingâ
BCW65ALT1G SOTâ23 3000/Tape & Reel
(PbâFree)
BCW65CLT1G SOTâ23 3000/Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
1
November, 2016 â Rev. 6
Publication Order Number:
BCW65ALT1/D
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