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BCW33LT1G_16 Datasheet, PDF (1/6 Pages) ON Semiconductor – General Purpose Transistor | |||
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BCW33LT1G, SBCW33LT1G
General Purpose Transistor
NPN Silicon
Features
⢠S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECâQ101 Qualified and
PPAP Capable
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector â Emitter Voltage
Collector â Base Voltage
Emitter â Base Voltage
Collector Current â Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
32
Vdc
32
Vdc
5.0
Vdc
100
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FRâ5 Board
PD
(Note 1)
TA = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance,
JunctionâtoâAmbient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate (Note 2),
TA = 25°C
Derate above 25°C
PD
300
mW
2.4
mW/°C
Thermal Resistance,
JunctionâtoâAmbient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg â 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FRâ 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 1994
1
November, 2016 â Rev. 6
www.onsemi.com
SOTâ23
(TOâ236)
CASE 318â08
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
D3 M G
G
D3
= Specific Device Code
M
= Date Code*
G
= PbâFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shippingâ
BCW33LT1G
SOTâ23 3,000/Tape & Reel
(PbâFree)
SBCW33LT1G SOTâ23 3,000/Tape & Reel
(PbâFree)
BCW33LT3G
SOTâ23 10,000/Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BCW33LT1/D
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