BCW33LT1G Datasheet, PDF (1/6 Pages) ON Semiconductor – General Purpose Transistor

BCW33LT1G
General Purpose Transistor
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
32
Vdc
32
Vdc
5.0
Vdc
100
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
P_D
(Note 1)
T_A = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
556
°C/W
Total Device Dissipation
Alumina Substrate (Note 2),
T_A = 25°C
Derate above 25°C
P_D
300
mW
2.4
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
417
°C/W
Junction and Storage Temperature
T_J, T_stg − 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
(TO−236AB)
CASE 318
STYLE 6
MARKING DIAGRAM
D3 M G
G
D3
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
BCW33LT1G
SOT−23 3000/Tape & Reel
(Pb−Free)
BCW33LT3G
SOT−23 10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 − Rev. 4
Publication Order Number:
BCW33LT1/D