BCW33LT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – General Purpose Transistor

BCW33LT1
General Purpose Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current — Continuous
Symbol Value
V_CEO
32
V_CBO
32
V_EBO
5.0
I_C
100
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation FR- 5 Board (Note 1)
P_D
T_A = 25°C
Derate above 25°C
225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate (Note 2), T_A = 25°C
Derate above 25°C
R_qJA
P_D
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R_qJA
T_J, T_stg
417
- 55 to
+150
°C/W
°C
1. FR- 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
PLASTIC
SOT-23 (TO-236AB)
CASE 318
MARKING DIAGRAM
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage V_(BR)CEO 32
(I_C = 2.0 mAdc, I_B = 0)
— Vdc
Collector - Base Breakdown Voltage
(I_C = 10 mAdc, I_B = 0)
V_(BR)CBO 32
— Vdc
Emitter - Base Breakdown Voltage
(I_E = 10 mAdc, I_C = 0)
V_(BR)EBO 5.0
—
Vdc
Collector Cutoff Current
(V_CB = 32 Vdc, I_E = 0)
(V_CB = 32 Vdc, I_E = 0, T_A = 100°C)
I_CBO
— 100 nAdc
— 10 µAdc
D3 M
D3 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
BW33LT1
SOT-23 3000 / Tape & Reel
© Semiconductor Components Industries, LLC, 2003
1
February, 2003 - Rev. 2
Publication Order Number:
BCW33LT1/D