BCW32LT1G_09 Datasheet, PDF (1/6 Pages) ON Semiconductor – General Purpose Transistors

BCW32LT1G
General Purpose
Transistors
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
V_CEO
32
Vdc
Collector-Base Voltage
V_CBO
32
Vdc
Emitter-Base Voltage
V_EBO
5.0
Vdc
Collector Current − Continuous
I_C
100
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Total Device Dissipation
FR-5 Board⁽¹⁾
T_A = 25°C
Derate above 25°C
P_D
225
1.8
Thermal Resistance,
Junction−to−Ambient
R_qJA
556
Total Device Dissipation
P_D
300
Alumina Substrate,⁽²⁾ T_A = 25°C
Derate above 25°C
2.4
Thermal Resistance,
Junction−to−Ambient
R_qJA
417
Junction and Storage Temperature T_J, T_stg −55 to +150
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236AB)
CASE 318
STYLE 6
MARKING DIAGRAM
D2 M G
G
1
D2 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
BCW32LT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 − Rev. 2
Publication Order Number:
BCW32LT1/D