BCW30LT1G_16 Datasheet, PDF (1/7 Pages) ON Semiconductor – General Purpose Transistors

BCW30LT1G, SBCW30LT1G
General Purpose
Transistors
PNP Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
V_CEO
−32
Vdc
Collector − Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_CBO
V_EBO
I_C
−32
−5.0
−100
Vdc
Vdc
mAdc
Characteristic
Symbol
Value
Unit
Total Device Dissipation
FR-5 Board (Note 1)
T_A = 25°C
Derate above 25°C
P_D
mW
225
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
556
°C/W
Total Device Dissipation
Alumina Substrate (Note 2)
T_A = 25°C
Derate above 25°C
P_D
300
mW
2.4
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
417
°C/W
Junction and Storage Temperature
T_J, T_stg −55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
www.onsemi.com
SOT−23 (TO−236)
CASE 318−08
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
C2 M G
G
1
C2
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
BCW30LT1G
SBCW30LT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
3,000/Tape & Reel
3,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1999
1
November, 2016 − Rev. 4
Publication Order Number:
BCW30LT1/D