BCW30LT1 Datasheet, PDF (1/8 Pages) ON Semiconductor – General Purpose Transistors(PNP Silicon)

BCW30LT1
General Purpose
Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
Characteristic
Symbol
Total Device Dissipation
FR-5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
PD
R_θJA
Total Device Dissipation
PD
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
R_θJA
Junction and Storage Temperature
TJ, Tstg
  (1) FR– 5 = 1.0 0.75 0.062 in.
  (2) Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Value
–32
–32
–5.0
–100
Value
225
1.8
556
300
2.4
417
–55 to
+150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT–23 (TO–236AB)
CASE 318
STYLE 6
DEVICE MARKING
C2x
x = Monthly Date Code
ORDERING INFORMATION
Device
Package
Shipping
BCW30LT1
SOT–23
3000 Units/Rail
© Semiconductor Components Industries, LLC, 1999
1
November, 1999 – Rev. 0
Publication Order Number:
BCW30LT1/D