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BC856B Datasheet, PDF (1/6 Pages) Rectron Semiconductor – SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) | |||
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BC856B, BC857B, BC858A
General Purpose
Transistors
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SCâ70/SOTâ323 which is
designed for low power surface mount applications.
Features
⢠S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECâQ101
Qualified and PPAP Capable
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector-Emitter Voltage
VCEO
V
BC856
â65
BC857
â45
BC858
â30
Collector-Base Voltage
VCBO
V
BC856
â80
BC857
â50
BC858
â30
EmitterâBase Voltage
Collector Current â Continuous
THERMAL CHARACTERISTICS
VEBO
IC
â5.0
â100
V
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FRâ 5 Board,
(Note 1) TA = 25°C
Thermal Resistance,
JunctionâtoâAmbient
PD
RqJA
150
mW
883
°C/W
Junction and Storage Temperature
TJ, Tstg â 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
3
1
2
SCâ70/SOTâ323
CASE 419
STYLE 3
MARKING DIAGRAM
XX M G
G
1
XX = Specific Device Code
M = Date Code*
G = PbâFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
April, 2015 â Rev. 4
Publication Order Number:
BC856BWT1/D
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