BC847CDXV6T1_10 Datasheet, PDF (1/5 Pages) ON Semiconductor – Dual General Purpose Transistors

BC847CDXV6T1,
BC847CDXV6T5
BC848CDXV6T1,
BC848CDXV6T5
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−563 which is designed for
low power surface mount applications.
Features
• These are Pb−Free Devices
http://onsemi.com
(3)
(2)
(1)
Q₁
Q₂
(4)
(5)
(6)
BC847CDXV6T1
MAXIMUM RATINGS
Rating
Symbol BC847 BC848 Unit
Collector − Emitter Voltage
V_CEO
45
30
V
Collector − Base Voltage
V_CBO
50
30
V
Emitter − Base Voltage
V_EBO
6.0
5.0
V
Collector Current − Continuous
I_C
100
100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation, (Note 1)
T_A = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
Characteristic
(Both Junctions Heated)
Total Device Dissipation, (Note 1)
T_A = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
Junction and Storage
Temperature Range
1. FR−4 @ Minimum Pad
Symbol
P_D
R_qJA
Max
357
2.9
350
Unit
mW
mW/°C
°C/W
Symbol
P_D
R_qJA
Max
500
4.0
250
Unit
mW
mW/°C
°C/W
T_J, T_stg − 55 to +150
°C
6
1
SOT−563
CASE 463A
PLASTIC
MARKING DIAGRAMS
1x M G
G
1
1x = Device Code
x = G or M
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
October, 2010 − Rev. 2
Publication Order Number:
BC847CDXV6T1/D