BC847ATT1_14 Datasheet, PDF (1/6 Pages) ON Semiconductor – General Purpose Transistors

BC847ATT1, BC847BTT1,
BC847CTT1
General Purpose
Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−75/SOT−416 package which
is designed for low power surface mount applications.
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• Pb−Free Packages are Available
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol Max Unit
Collector−Emitter Voltage
V_CEO
45
V
Collector−Base Voltage
V_CBO
50
V
Emitter−Base Voltage
V_EBO
6.0
V
Collector Current − Continuous
I_C
100 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation,
FR−4 Board (Note 1)
T_A = 25°C
Derated above 25°C
P_D
200
mW
1.6 mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
R_qJA
600 °C/W
Total Device Dissipation,
FR−4 Board (Note 2)
T_A = 25°C
Derated above 25°C
P_D
300
mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
R_qJA
400 °C/W
Junction and Storage
Temperature Range
T_J, T_stg −55 to
°C
+150
1. FR−4 @ min pad.
2. FR−4 @ 1.0 × 1.0 in pad.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
2
1
CASE 463
SC−75/SOT−416
STYLE 1
MARKING DIAGRAM
XXMG
G
XX = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
November, 2014 − Rev. 3
Publication Order Number:
BC847ATT1/D