BC846BDW1T1G Datasheet, PDF (1/10 Pages) ON Semiconductor – Dual General Purpose Transistors

BC846BDW1T1G,
BC847BDW1T1G,
BC848CDW1T1G
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol BC846 BC847 BC848 Unit
Collector −Emitter Voltage
V_CEO
65
45
30
V
Collector −Base Voltage
V_CBO
80
50
30
V
Emitter−Base Voltage
V_EBO
6.0
6.0
5.0
V
Collector Current −
Continuous
I_C
100 100 100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
P_D
Per Device
FR−5 Board (Note 1)
T_A = 25°C
Derate Above 25°C
Thermal Resistance,
Junction to Ambient
R_qJA
Junction and Storage
Temperature Range
T_J, T_stg
1. FR−5 = 1.0 x 0.75 x 0.062 in
Max
380
250
3.0
328
−55 to +150
Unit
mW
mW/°C
°C/W
°C
http://onsemi.com
(3)
(2)
(1)
Q₁
Q₂
(4)
(5)
(6)
6
1
SOT−363
CASE 419B
STYLE 1
MARKING
DIAGRAM
1x MG
G
1x = Specific Device Code
x = B, F, G, L
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
July, 2010 − Rev. 7
Publication Order Number:
BC846BDW1T1/D