BC846BDW1T1 Datasheet, PDF (1/6 Pages) ON Semiconductor – Dual General Purpose Transistors

BC846BDW1T1,
BC847BDW1T1,
BC848CDW1T1
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
• Device Marking:
BC846BDW1T1 = 1B
BC847BDW1T1 = 1F
BC848CDW1T1 = 1L
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol BC846 BC847 BC848 Unit
Collector −Emitter Voltage
V_CEO
65
45
30
V
Collector −Base Voltage
V_CBO
80
50
30
V
Emitter −Base Voltage
V_EBO
6.0
6.0
5.0
V
Collector Current −
Continuous
I_C
100 100 100 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
P_D
Per Device
FR−5 Board (Note 1)
T_A = 25°C
Derate Above 25°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
Junction and Storage
Temperature Range
T_J, T_stg
1. FR−5 = 1.0 x 0.75 x 0.062 in
Max
380
250
3.0
328
−55 to +150
Unit
mW
mW/°C
°C/W
°C
http://onsemi.com
(3)
(2)
(1)
Q₁
Q₂
(4)
(5)
(6)
DIAGRAM
MARKING
6
SOT−363
CASE 419B
1xm
1
STYLE 1
1x = Specific Device Code
x = B, F, L
m = Date Code
ORDERING INFORMATION
Device
Package
Shipping^†
BC846BDW1T1 SOT−363 3000 Units/Reel
BC847BDW1T1 SOT−363 3000 Units/Reel
BC847BDW1T1G SOT−363
(Pb−Free)
BC848CDW1T1 SOT−363
3000 Units/Reel
3000 Units/Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
1
June, 2004 − Rev. 3
Publication Order Number:
BC846BDW1T1/D