BC818-40L_16 Datasheet, PDF (1/4 Pages) ON Semiconductor – General Purpose Transistors

BC818-40L, NSVBC818-40L
General Purpose
Transistors
NPN Silicon
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
V_CEO
25
Collector −Base Voltage
V_CBO
30
Emitter −Base Voltage
V_EBO
5.0
Collector Current − Continuous
I_C
500
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
V
V
V
mAdc
Unit
Total Device Dissipation FR− 5 Board,
P_D
(Note 1) T_A = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
556
°C/W
Total Device Dissipation
P_D
Alumina Substrate, (Note 2) T_A = 25°C
Derate above 25°C
300
mW
2.4
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
417
°C/W
Junction and Storage Temperature
T_J, T_stg − 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAMS
6G M G
G
1
6G = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package Shipping^†
BC818−40LT1G
SOT−23 3000 / Tape &
(Pb−Free)
Reel
NSVBC818−40LT1G SOT−23 3000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
1
November, 2016 − Rev. 4
Publication Order Number:
BC818−40LT1/D