BC808-25LT1G_16 Datasheet, PDF (1/4 Pages) ON Semiconductor – General Purpose Transistors

BC808-25LT1G,
BC808-40LT1G
General Purpose
Transistors
PNP Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
−25
−30
−5.0
−500
V
V
V
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board,
P_D
(Note 1) T_A = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
556
°C/W
Total Device Dissipation Alumina
Substrate, (Note 2)
T_A = 25°C
Derate above 25°C
P_D
300
mW
2.4
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
417
°C/W
Junction and Storage Temperature
T_J, T_stg − 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
5x M G
G
1
5x = Device Code
x = F or G
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2004
1
October, 2016 − Rev. 5
Publication Order Number:
BC808−25LT1/D