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BC807-16LT1 Datasheet, PDF (1/4 Pages) ON Semiconductor – General Purpose Transistors(PNP Silicon) | |||
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BC807â16LT1,
BC807â25LT1, BC807â40LT1
General Purpose
Transistors
PNP Silicon
Features
⢠PbâFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector - Emitter Voltage
VCEO
â45
V
Collector - Base Voltage
VCBO
â50
V
Emitter - Base Voltage
VEBO
â5.0
V
Collector Current â Continuous
IC
â500 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation FRâ 5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, JunctionâtoâAmbient
Total Device Dissipation Alumina Substrate,
(Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance, JunctionâtoâAmbient
Junction and Storage Temperature
PD
RqJA
PD
RqJA
TJ, Tstg
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
225
mW
1.8 mW/°C
556 °C/W
300
mW
2.4 mW/°C
417 °C/W
â55 to °C
+150
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOTâ23
CASE 318
STYLE 6
MARKING
DIAGRAM
3
xxxD
1
2
xxx = 5A (BC807â16LT1)
5B1 (BC807â25LT1)
5C (BC807â40LT1)
D = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2004
1
June, 2004 â Rev. 5
Publication Order Number:
BC807â16LT1/D
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