BC637 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR(HIGH CURRENT TRANSISTORS)

BC637, BC639, BC639−16
High Current Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
Symbol
BC637
BC639
V_CEO
Value
60
80
Unit
Vdc
Collector - Base Voltage
V_CBO
Vdc
BC637
60
BC639
80
Emitter - Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T_A = 25°C
Derate above 25°C
V_EBO
I_C
P_D
5.0
Vdc
1.0
Adc
625
mW
5.0
mW/°C
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
P_D
800
mW
12
mW/°C
Operating and Storage Junction
Temperature Range
T_J, T_stg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient R_qJA
200
°C/W
Thermal Resistance, Junction−to−Case
R_qJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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COLLECTOR
2
3
BASE
1
EMITTER
TO−92
CASE 29
STYLE 14
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAMS
BC
63x
AYWW G
G
BC63
9−16
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
1
March, 2007 − Rev. 0
x = 7 or 9
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
BC637/D