BC618 Datasheet, PDF (1/6 Pages) Motorola, Inc – Darlington Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Darlington Transistors
NPN Silicon
Order this document
by BC618/D
BC618
COLLECTOR 1
BASE
2
EMITTER 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
55
Vdc
80
Vdc
12
Vdc
1.0
Adc
625
mW
5.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watts
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to
Ambient
R_qJA
200
°C/W
Thermal Resistance, Junction to Case
R_qJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc, VBE = 0)
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, VBE = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICES
ICBO
IEBO
1
23
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Min
Typ
Max
Unit
55
—
—
Vdc
80
—
—
Vdc
12
—
—
Vdc
—
—
50
nAdc
—
—
50
nAdc
—
—
50
nAdc
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1