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BC559B Datasheet, PDF (1/4 Pages) ON Semiconductor – Low Noise Transistors | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Low Noise Transistors
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol BC559x BC560C Unit
Collector â Emitter Voltage
Collector â Base Voltage
Emitter â Base Voltage
Collector Current â Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
â30
â45
â30
â50
â5.0
â100
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watt
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
â 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector â Emitter Breakdown Voltage
(IC = â10 mAdc, IB = 0)
BC559B, C
BC560C
V(BR)CEO
â30
â45
Collector â Base Breakdown Voltage
(IC = â10 µAdc, IE = 0)
BC559B, C
BC560C
V(BR)CBO
â30
â50
Emitter â Base Breakdown Voltage
(IE = â10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = â30 Vdc, IE = 0)
(VCB = â30 Vdc, IE = 0, TA = +125°C)
Emitter Cutoff Current
(VEB = â4.0 Vdc, IC = 0)
V(BR)EBO
â5.0
ICBO
â
â
IEBO
â
Order this document
by BC559B/D
BC559B
BC559C
BC560C
1
2
3
CASE 29â04, STYLE 17
TOâ92 (TOâ226AA)
Typ
Max
Unit
Vdc
â
â
â
â
Vdc
â
â
â
â
â
â
Vdc
â
â15
nAdc
â
â5.0
µAdc
â
â15
nAdc
replaces BC559/D
Motorola SmallâSignal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1997
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