BC559 Datasheet, PDF (1/4 Pages) Motorola, Inc – Low Noise Transistors

BC559
Low Noise Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current — Continuous
Total Device Dissipation @
T_A = 25°C
Derate above 25°C
V_CEO
V_CBO
V_EBO
I_C
P_D
Total Device Dissipation @
P_D
T_C = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
T_J, T_stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to
Ambient
R_qJA
Thermal Resistance, Junction to
Case
R_qJC
BC559 BC560
−30
−45
−30
−50
−5.0
−100
625
5.0
1.5
12
−55 to +150
Max
200
83.3
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°C/W
http://onsemi.com
1
23
CASE 29−04, STYLE 17
TO−92 (TO−226AA)
COLLECTOR
1
2
BASE
3
EMITTER
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I_C = −10 mAdc, I_B = 0)
BC559
BC560
V_(BR)CEO
−30
—
−45
—
Vdc
—
—
Collector −Base Breakdown Voltage
(I_C = −10 μAdc, I_E = 0)
BC559
BC560
V_(BR)CBO
−30
—
−50
—
Vdc
—
—
Emitter −Base Breakdown Voltage
(I_E = −10 mAdc, I_C = 0)
Collector Cutoff Current
(V_CB = −30 Vdc, I_E = 0)
(V_CB = −30 Vdc, I_E = 0, T_A = +125°C)
Emitter Cutoff Current
(V_EB = −4.0 Vdc, I_C = 0)
V_(BR)EBO
−5.0
—
—
Vdc
I_CBO
—
—
−15
nAdc
—
—
−5.0
μAdc
I_EBO
—
—
−15
nAdc
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 3
Publication Order Number:
BC559/D