BC556 Datasheet, PDF (1/6 Pages) Motorola, Inc – Amplifier Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC556/D
Amplifier Transistors
PNP Silicon
COLLECTOR
1
BC556,B
BC557A,B,C
BC558B
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
BC BC BC
Symbol 556 557 558 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–65 –45 –30 Vdc
–80 –50 –30 Vdc
–5.0
Vdc
–100
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watt
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient R_qJA
200
°C/W
Thermal Resistance, Junction to Case
R_qJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
BC556
BC557
BC558
V(BR)CEO
–65
–45
–30
Collector – Base Breakdown Voltage
(IC = –100 µAdc)
BC556
BC557
BC558
V(BR)CBO
–80
–50
–30
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
BC556
BC557
BC558
V(BR)EBO
–5.0
–5.0
–5.0
Collector–Emitter Leakage Current
(VCES = –40 V)
(VCES = –20 V)
(VCES = –20 V, TA = 125°C)
BC556
BC557
BC558
BC556
BC557
BC558
ICES
—
—
—
—
—
—
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Typ
Max
Unit
V
—
—
—
—
—
—
V
—
—
—
—
—
—
V
—
—
—
—
—
—
–2.0
–100
nA
–2.0
–100
–2.0
–100
—
–4.0
µA
—
–4.0
—
–4.0
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996