BC549B Datasheet, PDF (1/4 Pages) Motorola, Inc – Low Noise Transistors

Low Noise Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T_A = 25°C
Derate above 25°C
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_D
P_D
T_J, T_stg
BC549 BC550
30
45
30
50
5.0
100
625
5.0
1.5
12
–55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Symbol
R_qJA
R_qJC
Max
200
83.3
Unit
°C/W
°C/W
BC549B,C
BC550B,C
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
COLLECTOR
1
2
BASE
3
EMITTER
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = 10 mAdc, I_B = 0)
BC549B,C
BC550B,C
V_(BR)CEO
Vdc
30
—
—
45
—
—
Collector–Base Breakdown Voltage
(I_C = 10 µAdc, I_E = 0)
BC549B,C
BC550B,C
V_(BR)CBO
Vdc
30
—
—
50
—
—
Emitter–Base Breakdown Voltage
(I_E = 10 mAdc, I_C = 0)
Collector Cutoff Current
(V_CB = 30 V, I_E = 0)
(V_CB = 30 V, I_E = 0, T_A = +125°C)
Emitter Cutoff Current
(V_EB = 4.0 Vdc, I_C = 0)
V_(BR)EBO
5.0
—
—
Vdc
I_CBO
—
—
15
nAdc
—
—
5.0
µAdc
I_EBO
—
—
15
nAdc
© Semiconductor Components Industries, LLC, 2001
1
February, 2001 – Rev. 1
Publication Order Number:
BC549B/D