BC547 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

BC546B, BC547A, B, C,
BC548B, C
Amplifier Transistors
NPN Silicon
Features
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector-Emitter Voltage
V_CEO
Vdc
BC546
65
BC547
45
BC548
30
Collector-Base Voltage
V_CBO
Vdc
BC546
80
BC547
50
BC548
30
Emitter-Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T_A = 25°C
Derate above 25°C
V_EBO
I_C
P_D
6.0
Vdc
100
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation @ T_C = 25°C
P_D
Derate above 25°C
1.5
Watt
12
mW/°C
Operating and Storage Junction
Temperature Range
T_J, T_stg
−55 to
°C
+150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
R_qJA
200
°C/W
Thermal Resistance,
Junction−to−Case
R_qJC
83.3
°C/W
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
MARKING
DIAGRAM
TO−92
CASE 29
STYLE 17
BC
54xx
YWWG
1
2
3
BC54xx = Specific Device Code
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2004
1
May, 2004 − Rev. 4
Publication Order Number:
BC546/D