BC546 Datasheet, PDF (1/6 Pages) Motorola, Inc – Amplifier Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC546/D
Amplifier Transistors
NPN Silicon
COLLECTOR
1
BC546, B
BC547, A, B, C
BC548, A, B, C
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
BC BC BC
Symbol 546 547 548 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
65 45 30 Vdc
80 50 30 Vdc
6.0
Vdc
100
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watt
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient R_qJA
200
°C/W
Thermal Resistance, Junction to Case
R_qJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0)
BC546
BC547
BC548
V(BR)CEO
65
45
30
Collector – Base Breakdown Voltage
(IC = 100 µAdc)
BC546
BC547
BC548
V(BR)CBO
80
50
30
Emitter – Base Breakdown Voltage
(IE = 10 mA, IC = 0)
BC546
BC547
BC548
V(BR)EBO
6.0
6.0
6.0
Collector Cutoff Current
(VCE = 70 V, VBE = 0)
(VCE = 50 V, VBE = 0)
(VCE = 35 V, VBE = 0)
(VCE = 30 V, TA = 125°C)
BC546
ICES
—
BC547
—
BC548
—
BC546/547/548
—
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Typ
Max
Unit
—
—
V
—
—
—
—
—
—
V
—
—
—
—
—
—
V
—
—
—
—
0.2
15
nA
0.2
15
0.2
15
—
4.0
µA
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996