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BC517 Datasheet, PDF (1/6 Pages) Motorola, Inc – Darlington Transistors | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Darlington Transistors
NPN Silicon
Order this document
by BC517/D
BC517
COLLECTOR 1
BASE
2
EMITTER 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector â Emitter Voltage
Collector â Base Voltage
Emitter â Base Voltage
Collector Current â Continuous
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VCES
VCB
VEB
IC
PD
30
Vdc
40
Vdc
10
Vdc
1.0
Adc
625
mW
12
mW/°C
Total Power Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watts
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg â 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to
Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector â Emitter Breakdown Voltage
(IC = 2.0 mAdc, VBE = 0)
Collector â Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter â Base Breakdown Voltage
(IE = 100 nAdc, IC = 0)
Collector Cutoff Current
(VCE = 30 Vdc)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
V(BR)CES
V(BR)CBO
V(BR)EBO
ICES
ICBO
IEBO
1
23
CASE 29â04, STYLE 17
TOâ92 (TOâ226AA)
Min
Typ
Max
Unit
30
â
â
Vdc
40
â
â
Vdc
10
â
â
Vdc
â
â
500
nAdc
â
â
100
nAdc
â
â
100
nAdc
©MMotootorroollaa,
SmallâSignal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
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