BC489 Datasheet, PDF (1/6 Pages) Motorola, Inc – High Current Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC489/D
High Current Transistors
NPN Silicon
BC489,A,B
COLLECTOR
1
2
BASE
MAXIMUM RATINGS
3
EMITTER
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
80
Vdc
VCBO
80
Vdc
VEBO
5.0
Vdc
IC
0.5
Adc
PD
625
mW
5.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
1.5
Watt
Derate above 25°C
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
200
°C/W
Thermal Resistance, Junction to Case
R_qJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
ON CHARACTERISTICS*
V(BR)CEO
80
V(BR)CBO
80
V(BR)EBO
5.0
ICBO
—
DC Current Gain
(IC = 10 mAdc, VCE = 2.0 Vdc)
(IC = 100 mAdc, VCE = 2.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)*
BC489
BC489A
BC489B
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
hFE
40
60
100
160
15
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
100
nAdc
—
—
—
—
400
160
250
260
400
—
—
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996