BC337 Datasheet, PDF (1/6 Pages) Motorola, Inc – Amplifier Transistor

BC337, BC337−16,
BC337−25, BC337−40,
BC338−25
Amplifier Transistors
NPN Silicon
Features
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol BC337 BC338 Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ T_A = 25°C
Derate above 25°C
V_CEO
V_CBO
V_EBO
I_C
P_D
45
25
50
30
5.0
800
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation
@ T_C = 25°C
Derate above 25°C
P_D
W
1.5
mW/°C
12
Operating and Storage Junction
Temperature Range
T_J, T_stg − 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
R_qJA
200
°C/W
Thermal Resistance,
Junction−to−Case
R_qJC
83.3
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
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COLLECTOR
1
2
BASE
3
EMITTER
MARKING
DIAGRAM
BC33
xxxx
YWW
TO−92 (TO−226)
CASE 29
xxxx = Specific Device Code
Y
= Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2004
1
July, 2004 − Rev. 4
Publication Order Number:
BC337/D