BAW56WT1G_16 Datasheet, PDF (1/4 Pages) ON Semiconductor – Dual Switching Diode, Common Anode

BAW56WT1G,
SBAW56WT1G
Dual Switching Diode,
Common Anode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol Max Unit
Reverse Voltage
V_R
70
V
Forward Current
I_F
200
mA
Peak Forward Surge Current
I_FM(surge) 500
mA
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T_A = 25°C)
Characteristic
Symbol Max Unit
Total Device Dissipation FR− 5 Board
(Note 1)
T_A = 25°C
Derate above 25°C
P_D
200
mW
1.6 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2) T_A = 25°C
Derate above 25°C
R_qJA
P_D
625 °C/W
300
mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R_qJA
T_J, T_stg
417
−55 to
+150
°C/W
°C
1. FR− 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
www.onsemi.com
SC−70
CASE 419
STYLE 4
ANODE
3
CATHODE
1
2
CATHODE
MARKING DIAGRAM
A1 M G
G
1
A1 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
BAW56WT1G
SBAW56WT1G
SC−70 3,000 / Tape & Reel
(Pb−Free)
SC−70 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
April, 2016 − Rev. 8
Publication Order Number:
BAW56WT1/D