BAW56WT1G Datasheet, PDF (1/4 Pages) ON Semiconductor – Dual Switching Diode, Common Anode

BAW56WT1G
Dual Switching Diode,
Common Anode
Features
 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_A = 25C)
Rating
Symbol Max Unit
Reverse Voltage
V_R
70
V
Forward Current
I_F
200
mA
Peak Forward Surge Current
I_FM(surge) 500
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS (T_A = 25C)
Characteristic
Symbol Max Unit
Total Device Dissipation FR-- 5 Board
(Note 1)
T_A = 25C
Derate above 25C
P_D
200
mW
1.6 mW/C
Thermal Resistance, Junction--to--Ambient
Total Device Dissipation
Alumina Substrate (Note 2) T_A = 25C
Derate above 25C
R_θJA
P_D
625
C/W
300
mW
2.4 mW/C
Thermal Resistance, Junction--to--Ambient
Junction and Storage Temperature
R_θJA
T_J, T_stg
417
-- 55 to
+150
C/W
C
1. FR-- 5 = 1.0 ¢ 0.75 ¢ 0.062 in.
2. Alumina = 0.4 ¢ 0.3 ¢ 0.024 in. 99.5% alumina.
http://onsemi.com
ANODE
3
CATHODE
1
2
CATHODE
MARKING
DIAGRAM
3
1
2
SC--70
CASE 419
STYLE 4
A1 M G
G
1
A1 = Device Code
M = Date Code*
G = Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
BAW56WT1G SC--70
(Pb--Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2010
1
October, 2010 -- Rev. 6
Publication Order Number:
BAW56WT1/D